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PD - 94919A
IRG4BC10SPBF
INSULATED GATE BIPOLAR TRANSISTOR
Features
* Extremely low voltage drop; 1.1V typical at 2A * S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in Chopper Applications * Very Tight Vce(on) distribution * Industry standard TO-220AB package * Lead-Free
C
Standard Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A
n-channel
Benefits
* Generation 4 IGBTs offer highest efficiency available * IGBTs optimized for specified application conditions * Lower conduction losses than many Power MOSFET''s TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PDTC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 14 8.0 18 18 20 110 38 15 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
mJ
W C
Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
0.5 2.0(0.07)
Max.
3.3 50
Units
C/W g (oz)
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1
07/04/07
IRG4BC10SPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES V(BR)ECS
V(BR)CES/TJ
VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES
Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 18 -- -- V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage -- 0.64 -- V/C VGE = 0V, IC = 1.0mA VGE = 15V -- 1.58 1.8 IC = 8.0A Collector-to-Emitter Saturation Voltage -- 2.05 -- IC = 14A See Fig.2, 5 V -- 1.68 -- IC = 8.0A , TJ = 150C Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -9.5 -- mV/C VCE = VGE, IC = 250A Forward Transconductance 3.7 5.5 -- S VCE = 100V, IC = 8.0A -- -- 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current A -- -- 2.0 VGE = 0V, VCE = 10V, TJ = 25C -- -- 1000 VGE = 0V, VCE = 600V, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 15 22 IC = 8.0A 2.4 3.6 nC VCC = 400V See Fig. 8 6.5 9.8 VGE = 15V 25 -- 28 -- TJ = 25C ns 630 950 IC = 8.0A, VCC = 480V 710 1100 VGE = 15V, RG = 100 0.14 -- Energy losses include "tail" 2.58 -- mJ See Fig. 9, 10, 14 2.72 4.3 24 -- TJ = 150C, 31 -- IC = 8.0A, VCC = 480V ns 810 -- VGE = 15V, RG = 100 1300 -- Energy losses include "tail" 3.94 -- mJ See Fig. 11, 14 7.5 -- nH Measured 5mm from package 280 -- VGE = 0V 30 -- pF VCC = 30V See Fig. 7 4.0 -- = 1.0MHz
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b ) (See fig. 13a)
Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 100, Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC10SPBF
20
For both:
Triangular wave:
16
Load Current (A)
Duty cycle: 50% TJ = 125C Tsink 90C = Gate drive as specified Power Dissipation = 9.2 W
Clamp voltage: 80% of rated
12
Square wave: 60% of rated voltage
8
4
Ideal diodes
0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
TJ = 25 C
10
T = 150 C J
I C , Collector-to-Emitter Current (A)
I C, Collector Current (A)
10
TJ = 150 C
TJ = 25 C V CC = 50V 5s PULSE WIDTH 5s PULSE WIDTH
6 8 10 12
1 0.8
V GE = 15V 20s PULSE WIDTH
1.2 1.6 2.0 2.4 2.8 3.2
1
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4BC10SPBF
16
3.00
VCE , Collector-to-Emitter Voltage(V)
VGE = 15V 80 us PULSE WIDTH IC = 16 A
Maximum DC Collector Current(A)
12
2.50
8
2.00
IC =
8A
4
1.50
IC =
4A
0
25
50
75
100
125
150
1.00 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC10SPBF
500
400
VGE , Gate-to-Emitter Voltage (V)
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 8A
C, Capacitance (pF)
Cies
300
15
Coes
200
10
100
Cres
5
0
1
10
100
0
0
5
10
15
20
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
2.8
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V V GE = 15V TJ = 25 C I C = 8.0A
100
RG = 100 Ohm VGE = 15V VCC = 480V IC = 16 A IC = IC =
8A 4A
10
2.7
1
2.6
0
20
40
60
80
100
0.1 -60 -40 -20
0
20
40
60 80 100 120 140 160
RG ,, Gate Resistance (Ohm) RG Gate Resistance ( )
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4BC10SPBF
12
Total Switching Losses (mJ)
8
I C , Collector Current (A)
RG TJ VCC 10 VGE
= Ohm 100 = 150 C = 480V = 15V
100
VGE = 20V T J = 125 oC
6
10
4
2
0
0
4
8
12
16
1
SAFE OPERATING AREA
1 10 100 1000
I C , Collector Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector Current
Fig. 12 - Turn-Off SOA
6
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IRG4BC10SPBF
L 50V 1000V VC *
0 - 480V
D.U.T.
RL =
480V 4 X IC@25C
c
480F 960V
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
IC L Driver* 50V 1000V VC D.U.T.
Fig. 14a - Switching Loss
Test Circuit
* Driver same type as D.U.T., VC = 480V
A
d
e
c d
90%
e
VC 90%
10%
t d(off)
Fig. 14b - Switching Loss
Waveforms
10% I C 5% t d(on)
tr E on E ts = (Eon +Eoff )
tf t=5s E off
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IRG4BC10SPBF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
@Y 6HQG@) UCDTADTA6 IADSA G PUA8P9@A A DIU@SI6UDPI6G (A! S@8UDAD@S GPBP 96U@A8P9@ Ir)AAQAAvAhr iyAyvr A vv vq vph r AAGrh qAAArr A @6SA A2 A! X@@F A GDI@A8 ( Q6 SU AIVH7@S &'( 6 TT@H 7G@9APIAXX A
DIAU C@A6 TT@H 7GAG DI@AA8A
6 TT@H 7G G PUA8P9@
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2007
8
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